thin film apparatus, a manufacturing method of the thin film apparatus, an active matrix substrate, a manufacturing method of the active matrix substrate, and an electro-optical apparatus having the active matrix substrate

ABSTRACT

A manufacturing method of a thin film apparatus, includes: a first step for forming a separation layer on a heat resistant substrate; a second step for forming a thin film device on the separation layer; a third step for providing a surface layer on the thin film device; and a fourth step for generating a peeling phenomenon at the interface of the separation layer and the heat resistant substrate so as to peel the heat resistant substrate from a side of the thin film device.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention generally relates to a thin film apparatus, amanufacturing method of the thin film apparatus, an active matrixsubstrate, a manufacturing method of the active matrix substrate, and anelectro-optical apparatus having the active matrix substrate, and moreparticularly technologies whereby the thin film device is formed on thesubstrate and then peeled from the substrate.

2. Description of the Related Art

A semiconductor process is utilized for manufacturing a thin filmtransistor (hereinafter “TFT”), as a switching element, on a substratefor an active matrix type liquid crystal display apparatus using aliquid crystal as electro-optical material. Since the above mentionedprocess includes a step having a high temperature process, it isnecessary to use a substrate made of material having good heatresistance, namely material having both a high softening point and ahigh melting point. Therefore, presently, quartz glass is used as asubstrate that can resist a temperature of approximately 1000 degreescentigrade and a heat resistant glass is used as a substrate that canresist temperature of approximately 500 degrees centigrade.

Thus, a substrate where the thin film device such as the TFT is providedcan resist a temperature condition or the like for manufacturing thethin film device. However, the above mentioned quartz glass or heatresistant glass is not always advantageous after the substrate wherethin film device such as the TFT is provided is completed. For example,in a case where the quartz glass or the heat resistant glass is used forresisting the manufacturing process having the heat temperature process,the product price of the display apparatus or the like is high, as thesesubstrates are extremely expensive.

In addition, it is required for the display apparatus used for aportable electronic machine, such as a palm top computer or a portablephone, to have a price as low as possible, a light weight, someresistance to deformation, and a resistance to splitting even if thedisplay apparatus is dropped. However, the quartz glass or the heatresistant glass is heavy, poor at resisting deformations and easy tobecome split if the display apparatus is dropped. Accordingly, thesubstrate used for the conventional thin film apparatus has problems inthat the substrate is not suited for limitations in terms ofmanufacturing conditions and characteristics required for the product.

Meanwhile, Japanese Laid-Open Patent Application No. 10-125929 disclosesa technology whereby after a polycrystalline silicon TFT is formed on afirst substrate under conditions equivalent to conventional processes,the thin film device is peeled from the first substrate and transferredto a second substrate. A separation layer is formed between the firstsubstrate and the thin film device and energy light, for example, isprojected onto the separation layer. As a result of this, the thin filmdevice is peeled from the first substrate and transferred to a side ofthe second substrate.

Recently, an organic TFT and an organic electroluminescent (hereinafter“EL”) element have been studied as organic thin film electronic devices,and a manufacturing an organic EL display driven by an organic TFTactive matrix driving has been attempted as an application of theorganic TFT and the organic EL element. The organic electronic devicedoes not need expensive manufacturing equipment to be manufactured,unlike the polycrystalline silicon TFT. The organic electronic devicecan be manufactured cheaply and is suitable as a display apparatus usedfor the above mentioned palm top computer and the portable electronicmachine such as the portable phone.

In a case where the above mentioned organic TFT is formed on a plasticsheet (substrate), it is very difficult to directly form the activeelement thereon, because the substrate is poor at measurement stability.

Japanese Laid-Open Patent Application No. 8-62591 discloses a technologywhereby an active matrix layer, pre-formed on a substrate having goodheat resistance such as glass, is transferred onto the plastic sheetsubstrate. In the technology disclosed in the Japanese Laid-Open PatentApplication No. 8-62591, complex steps, such as application of metalplating to a release layer and providing a transparent electricinsulation layer to the active matrix layer, are required. In addition,the technology disclosed in the Japanese Laid-Open Patent ApplicationNo. 8-62591 has a problem of stress being generated due to use of asolvent type pressure-sensitive adhesive composition as an adhesivecomposition. Furthermore, Japanese Laid-Open Patent Application No.2001-356370 discloses complex steps whereby a slit is additionallyformed and an inorganic buffer layer is arranged in order to protect theactive matrix layer from an external force at the time of transferring.

According to the above mentioned technologies, a release separationlayer is formed and transferred to second and third substrates, so thatan active matrix substrate is formed on a flexible sheet having a largearea.

An important technology with regard to a transferring method is apeeling step. The above mentioned technologies can be divided into:methods for a reduction of an adhering force based on a phase changephenomena by laser irradiation applied to amorphous silicon, and areduction of an adhering force based on radiation irradiation (JapaneseLaid-Open Patent Application No. 8-152512); a method for physical andchemical removal of a substrate (Japanese Laid-Open Patent ApplicationsNo. 10-189924 and No. 11-31828); and a method for protecting an elementfrom a stress-generating mechanical peeling.

However, there is a problem in that the peeling phenomenon at theseparation layer is not properly generated in the conventional peelingmethod and transferring method. Furthermore, there is a conventionallimitation of the size of the substrate, so that it is impossible toapply an element having a large area, which is a specific futurerequirement of organic electronic devices.

SUMMARY OF THE INVENTION

Accordingly, it is a general object of the present invention to providea novel and useful thin film apparatus, manufacturing method of the thinfilm apparatus, active matrix substrate, manufacturing method of theactive matrix substrate, and electro-optical device having the activematrix substrate.

Another and more specific object of the present invention is to provide(1) a manufacturing method of a thin film apparatus whereby an organicfilm used as a separation layer is made properly so that a thin filmdevice can be peeled from a substrate without any damage, and the thinfilm device can be transferred to another substrate, (2) a manufacturingmethod of a thin film apparatus whereby a separation layer is made tohave sufficient mechanical strength, so that in manufacturing it can behandled as an independent body without using a transferring substrate asthe conventional second substrate, and connected to another substratethat is a support substrate at the same side as the first substrate, (3)a manufacturing method of a thin film apparatus whereby a separationlayer is made to have a higher mechanical strength and used as anindependent body, (4) a thin film apparatus manufactured by the abovementioned methods, (5) a manufacturing method of an active matrixsubstrate using the above mentioned manufacturing methods of the thinfilm apparatus, (6) an active matrix substrate manufactured by the abovementioned method, and (7) an electro-optical device having the activematrix substrate.

The above objects can be achieved by a manufacturing method of a thinfilm apparatus, including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming a thin film device on the separation layer;

a third step for providing a surface layer at a side of the thin filmdevice opposite to another side that faces the heat resistant substrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film device,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic that generates a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

According to the above mentioned invention, the separation layer is anorganic film. Therefore, the strong adhering force to the heat resistantsubstrate of the separation layer is changed to an extremely weakadhering force based on a liquid phase that exists at the interface ofthe separation layer and the heat resistant substrate. Hence, thepeeling phenomenon is generated at the interface. Accordingly, the heatresistant substrate can be peeled from a side of the thin film deviceand the thin film device can be transferred to a side of a surfacesubstrate. Hence, conditions required for materials of the substrate offinal products become relax so that the thin film apparatus having highreliability can be manufactured at low prices.

In the above mentioned method, the separation layer may be made ofpoly-para-xylylene or a dielectric of the poly-para-xylylene.

According to the above mentioned invention, since poly-para-xylylene ora dielectric of the poly-para-xylylene is used as the separation layer,the peeling phenomenon based on the liquid phase existing at theinterface of the separation layer and the heat resistant substrate isgenerated remarkably. Hence, it is possible to peel the heat resistantsubstrate from the side of the thin film device easily. That is, theseparation layer has a substrate adhering force resisting sufficientlythe organic TFT process. In addition, in the peeling step, the peelingphenomenon can be implemented easily based on a reduction of theadhering force.

In the above mentioned method, the separation layer may have a filmthickness greater than 10 μm.

According to the above mentioned invention, since the film thickness ofthe separation layer is large, it is possible to peel the heat resistantsubstrate from the side of the thin film device and obtain anindependent body wherein the separation layer is a substrate.

In the above mentioned method, an organic layer functioning as a surfaceprotection layer may be formed as the surface layer in the third step.

According to the above mentioned invention, it is possible to improveresistance to weather of the thin film apparatus.

In the above mentioned method, the organic layer may be made of the samematerial as the separation layer.

According to the above mentioned invention, it is possible to avoidpreparing another manufacturing apparatus for the protection film.

The above mentioned method further includes a fifth step for adhering abottom surface substrate on a surface where the heat resistant substrateis peeled from the thin film device in the fourth step.

According to the above mentioned invention, in the thin film apparatushaving a bottom surface substrate with flexibility, a stuck structure atthe time when the thin film device is formed on the heat resistantsubstrate can be maintained without making a pattern, formed at first,turned over.

In the above mentioned method, in the third step the surface layer maybe provided by adhering a surface substrate different from the heatresistant substrate with an adhesive layer, and in the fourth step thethin film device may be transferred to the surface substrate at the sametime when the heat resistant substrate is peeled from the other side ofthe thin film device.

According to the above mentioned invention, since transferring isimplemented by adhering the substrate having flexibility to a surface atthe side opposite to the heat resistant substrate, it is possible toobtain the thin film apparatus having high reliability.

In the above mentioned method, the adhesive layer also may serve as theseparation layer, and further includes a fifth step for adhering abottom surface substrate on a surface where the heat resistant substrateis peeled from the thin film device in the fourth step, and a sixth stepfor transferring the thin film device to a side of the bottom surfacesubstrate, by generating a peeling phenomenon at least either in theadhesive layer also serving as the separation layer or at the interfaceof the adhesive layer, so as to peel the surface substrate from theother side of the thin film device.

According to the above mentioned invention, in the thin film apparatushaving a bottom surface substrate with flexibility, a stuck structure atthe time when the thin film device is formed on the heat resistantsubstrate can be maintained without making a pattern, formed at first,turned over.

In the above mentioned method, at least an organic thin film transistormay be formed on the heat resistant substrate as the thin film device inthe second step.

According to the above mentioned invention, it is possible to obtain athin film apparatus that can be applied widely because at least a TFT isformed on the heat resistant substrate.

The above objects can be achieved by a thin film apparatus manufacturedby a manufacturing method, the manufacturing method including

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming a thin film device on the separation layer;

a third step for providing a surface layer at a side of the thin filmdevice opposite to another side that faces the heat resistant substrate;and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film device,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic that generates a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

According to the above mentioned invention, it is possible tomanufacture the thin film apparatus having high reliability.

The above objects can be achieved by a manufacturing method of an activematrix substrate having a thin film transistor as forming a matrix,including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming a thin film transistor for pixel switching onthe separation layer as forming a matrix;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic that generates a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

In the second step, the thin film transistor may be formed on the heatresistant substrate as forming a matrix, and a scanning lineelectrically connecting to a gate of the thin film transistor, a dataline electrically connecting to a source of the thin film transistor,and a pixel electrode electrically connecting to a drain of the thinfilm transistor are formed.

The above objects can be achieved by a manufacturing method of an activematrix substrate having a driving circuit providing a thin filmtransistor, including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for the drivingcircuit on the separation layer;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

The above objects can be achieved by an active matrix substrate having athin film transistor as forming a matrix manufactured by a manufacturingmethod, the manufacturing method including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for pixel switchingon the separation layer as forming a matrix;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

The above objects can be achieved by an active matrix substrate having adriving circuit providing a thin film transistor, manufactured by amanufacturing method, the manufacturing method including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for the drivingcircuit on the separation layer;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

According to the above mentioned inventions, it is possible tomanufacture the active matrix substrate having a light weight and alarge area.

The above objects can be achieved by an electro-optical apparatus havingan active matrix substrate, the active matrix substrate having a thinfilm transistor as forming a matrix manufactured by a manufacturingmethod, the manufacturing method including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for pixel switchingon the separation layer as forming the matrix;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

The above objects can be achieved by an electro-optical apparatus havingan active matrix substrate, the active matrix substrate having a drivingcircuit providing a thin film transistor, manufactured by amanufacturing method, the manufacturing method including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for the drivingcircuit on the separation layer;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from a side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

The above objects can be achieved by an electro-optical apparatus havingan active matrix substrate and a liquid crystal element or anelectrophoresis display element, the active matrix substrate having athin film transistor as forming a matrix manufactured by a manufacturingmethod, the manufacturing method including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for pixel switchingon the separation layer as forming the matrix;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

The above objects can be achieved by an electro-optical apparatus havingan active matrix substrate and a liquid crystal element or anelectrophoresis display element, the active matrix substrate having adriving circuit providing a thin film transistor, manufactured by amanufacturing method, the manufacturing method including:

a first step for forming a separation layer on a heat resistantsubstrate;

a second step for forming the thin film transistor for the drivingcircuit on the separation layer;

a third step for providing a surface layer at a side of the thin filmtransistor opposite to another that faces the heat resistant substrate;and

a fourth step for generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,

wherein an organic layer is formed as the separation layer in the firststep, the organic layer having a characteristic generating a peelingphenomenon because of a reduction of an adhering force to the heatresistant substrate of the separation layer based on a liquid phaseexisting at the interface of the separation layer and the heat resistantsubstrate, and

the peeling phenomenon is generated in the fourth step by generating theliquid phase at the interface of the separation layer and the heatresistant substrate.

According to the above mentioned inventions, it is possible to obtain anelectro-optical apparatus having a light weight and a large area.

Other objects and further features of the present invention will becomeapparent from the following detailed description when read inconjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a view for explaining manufacturing methods of thin filmapparatuses of first and second embodiments of the present invention;

FIG. 2 is a view for explaining the manufacturing methods of the thinfilm apparatuses of the first and second embodiments of the presentinvention;

FIG. 3 is a view for explaining the manufacturing methods of the thinfilm apparatuses of the first and second embodiments of the presentinvention;

FIG. 4 is a view for explaining the manufacturing methods of the thinfilm apparatuses of the first and second embodiments of the presentinvention;

FIG. 5 is a view for explaining the manufacturing methods of the thinfilm apparatuses of the first and second embodiments of the presentinvention;

FIG. 6 is a view for explaining manufacturing methods of thin filmapparatuses of third and fourth embodiments of the present invention;

FIG. 7 is a view for explaining the manufacturing method of the thinfilm apparatus of the third embodiment of the present invention;

FIG. 8 is a view for explaining an example of the second embodiment ofthe present invention;

FIG. 9 is a view for explaining an example of the third embodiment ofthe present invention; and

FIG. 10 is a view for explaining an example of the fourth embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First and SecondEmbodiment

FIG. 1 through FIG. 5 are cross-sectional views for explainingmanufacturing methods of thin film apparatuses of the first and secondembodiments of the present invention and show steps during a periodbetween forming of the thin film device on the substrate and peeling thethin film device from the heat resistant substrate.

<First Step>

Referring to FIG. 1, a heat resistant substrate 100 and a separationlayer 120 are used for the first step.

According to the manufacturing method of the thin film apparatus ofthese embodiments, first, the separation layer 120 is formed on the heatresistant substrate 100. The material for the heat resistant substrate100 is required to meet a purpose for manufacturing an organicelectronic device, that is to have small change of measurement. Moreparticularly, a silicon(Si) wafer, a glass substrate, a ceramicssubstrate, and the like, can be used as the heat resistant substrate100.

In these embodiments, it is important for the separation layer 120 tohave (1) a heat resistance so that the active matrix layer made of theorganic TFT can be formed, (2) sure adherability to the active matrixlayer, (3) durability to an etching process in a case of patterning atthe time for forming the active matrix layer, (4) a strong adherabilityto resist the process with the heat resistant substrate (for example, astrength higher than 10g/cm in the 90 degrees peeling test) and (5)adherability that provides peel-controllability without causing damageto other layers at the time of the fourth step, to less than 10 g/cmunder in the 90 degrees peeling test, for example.

In the present invention, the adhesive force of the separation layer 120can be controlled by generating the liquid phase at the interface, sothat the liquid phase can be a force to cause peeling. It is generallypreferable that the thickness of the separation layer 120 beapproximately 1-20 μm.

In the present invention, an organic film, formed by a chemical vapordeposition method with an organic material and/or gas of the organicmaterial, may be used for the separation layer 120.

In addition, an organic film made of poly-para-xylylene known by thetrademark Parylene or a dielectric of the poly-para-xylylene(hereinafter “parylene”) or fluorinated polymer may be used for theseparation layer 120. Particularly, the poly-para-xylylene film iseffective in that the adhering force can be controlled by generating theliquid phase at the interface.

A basic structure of poly-para-xylylene is as follows.(Basic Structure of Poly-Para-Xylylene)

In addition, a basic structure of the dielectric of thepoly-para-xylylene by a halogen exchange is as follows.(Basic Structure of the Dielectric of Poly-Para-Xylylene by HalogenExchange)

The parylene film is a coating film formed of poly-para-xylylene resin,developed by an American company, Union Carbide Chemicals & Plastics,with a vapor deposition.

Di-para-xylylene solid dimmer that is an ingredient of parylene isvaporized and thermally cracked and simultaneous reactions of adsorptionand polymerization on the substrate of stable diradical para-xylylenemonomer that is generated by the above mentioned vaporization andthermal cracking, occur, so that this coating film can be formed.

It is possible to implement minute coating with this coating film,unlike conventional liquid coating and powder coating. In addition, thiscoating film has excellent characteristics in that any configuration andmaterial of an object for coating can be selected and coating can beimplemented at room temperature. Hence, this coating film can be used asa proper conformal (same type) coating for wide use such as coating forultra minute parts and all-purpose parts. For example, this coating filmcan be applied to an insulating film coating of a hybrid IC, a film forprevention of generation of dust powder of disk drive parts, alubricating film of a stepping motor, a film for prevention forcorrosion of a biomaterial, and the like.

<Second Step>

The second step is shown in FIG. 2 and FIG. 3. Referring to FIG. 2, thethin device layer 140 is used for the second step. In FIG. 2, parts thatare the same as the parts shown in FIG. 1 are given the same referencenumerals.

Referring to FIG. 3, an organic semiconductor layer 144, a gateinsulating film 148, a gate electrode 150, and source and drainelectrodes 152 are used for the second step. In FIG. 3, parts that arethe same as the parts shown in FIG. 1 and FIG. 2 are given the samereference numerals.

As shown in FIG. 2, the thin film device layer 140 including variousthin film devices is formed on the separation layer 120. The thin filmdevice layer 140 includes an organic TFT element as shown in FIG. 3. Theorganic TFT element may be formed by arranging an intermediate layer ata bottom surface of the thin film device. The TFT shown in FIG. 3 is aTFT having a reverse stagger structure. That is, the TFT shown in FIG. 3includes the organic semiconductor layer 144, the gate insulating film148, the gate electrode 150, and the source and drain electrode 152.

In an example shown in FIG. 2, the thin film device layer 140 includes athin film device such as the TFT. However, the thin film device formedin this thin film device layer 140 may be not only the TFT but also,corresponding to kinds of machines to be manufactured, for example anorganic thin film diode, a photoelectric conversion element (opticalsensor, solar battery) made by a PIN connection of an organic electronicmaterial, an organic resistance element, other kinds of the organic thinfilm semiconductor devices, various kinds of the organic electrodes, aswitching element, a memory, and the like. Functions of the abovementioned organic thin film devices are improved by having a large areaand integration.

The manufacturing method of the thin film device of the presentinvention can be applied to a manufacturing method of an active matrixsubstrate. In this case, in the second step, the thin film transistor asthe thin film device is formed on the heat resistant substrate asforming a matrix, so that the active matrix substrate having the thinfilm transistor as forming a matrix shape can be obtained.

<Third Step>

FIG. 4-(a) is a view for explaining the first embodiment of the presentinvention. FIG. 4-(b) is a view for explaining the second embodiment ofthe present invention.

As shown in FIG. 4-(a), an adhesive layer 160, a surface substrate 170,and a surface layer 180 are used for the first embodiment. As shown inFIG. 4-(b), the surface layer 180 is used for the second embodiment.

In FIG. 4, parts that are the same as the parts shown in FIG. 1, FIG. 2and FIG. 3 are given the same reference numerals. Hereinafter, the firstand second embodiments will be explained separately

First Embodiment

As shown in FIG. 4-(a), the surface layer 180 is formed by adhering thesurface substrate 170 on the thin film device layer 140 (at a sideopposite to the heat resistant substrate 100) with the adhesive layer160.

Various curing type adhesive layers, for example a reactive curing typeadhesive agent, a heat curing type adhesive agent, an optical curingtype adhesive agent such as an ultraviolet ray curing type adhesiveagent, or an anaerobic curing type adhesive agent may be used as aproper example of an adhesive agent composing the adhesive layer 160.The adhesive agent may be comprised by, for example, an epoxy group, anacrylate group, a silicone group, and any other groups. Such an adhesivelayer 160 may be formed by, for example, an application method.

In a case where the curing type adhesive agent is used for the adhesivelayer 160, for example, after the adhesive agent is applied on the thinfilm device layer 140 and the surface substrate 170 is connectedthereto, the adhesive agent is cured by a curing method corresponding toa characteristic of the curing type adhesive agent, so that the thinfilm device layer 140 and the surface substrate 170 adhere and arefixed.

In a case where the optical curing type adhesive agent is used for theadhesive layer 160, for example, after the adhesive agent is applied onthe thin film device layer 140 and the surface substrate 170 isconnected thereto, if the heat resistant substrate 100 has an opticalpermeability, light is irradiated from a side of the heat resistantsubstrate onto the adhesive agent, so that the adhesive layer becomescured and the thin film device layer 140 and the surface substrate 170adhere and are fixed.

Alternatively, in a case where a material having an optical permeabilityis used as a surface substrate, light may be irradiated from a side ofthe surface substrate 170 onto the adhesive agent. In addition, lightmay be irradiated from both sides of the heat resistant substrate 100having an optical permeability and the surface substrate 170 having anoptical permeability onto the adhesive layer. In this case, anultraviolet ray curing type adhesive agent is preferable as the adhesiveagent, because it is difficult for the ultraviolet ray curing typeadhesive agent to have an influence on the thin film device layer 140.

A water soluble adhesive agent may be used as the adhesive layer 160.For example, polyvinyl alcohol resin, Chemiseal U-451D (product name)made by Chemitech Inc., or Three Bond 3046 (product name) made by ThreeBond Co., Ltd. may be used as the adhesive layer 160.

Instead of forming the adhesive layer 160 at a side of the thin filmdevice layer 140, the adhesive layer 160 may be formed at a side of thesurface substrate 170 so as to adhere the surface substrate 170 to thethin film device layer 140 with the adhesive layer 160. Forming theadhesive layer 160 can be omitted to in a case where the surfacesubstrate 170 itself has an adhesive function.

The characteristics, such as the heat resistance and the corrosionresistance, of the surface substrate 170 may be inferior to the heatresistant substrate 100. That is, in the present invention, since thisthin film device layer 140 is transferred to the surface substrate 170after the thin film device layer 140 is formed on a surface of the heatresistant basic layer 100, the surface substrate 170 is not required tohave a characteristic such as substrate measurement stability.

Depending on kinds of machines to be manufactured, the surface substrate170 is required to have a mechanical characteristic such asrigidity(strength) to some extent, but the surface substrate 170 mayhave flexibility and elasticity.

For example, a cheap glass substrate not having a high melting point, athin plastic substrate having a sheet configuration, or a thick plasticsubstrate may be used as the surface substrate 170, depending on thekinds of machines to be manufactured. In addition, the surface substrate170 does not have to be not a plane plate but may have a curvedconfiguration.

In a case where a plastic substrate is used as the surface substrate170, either a thermoplastic resin or a thermosetting resin may be usedas a synthetic resin comprising the plastic substrate. For example, apolyolefin such as polyethylene, polypropylene, ethylene-propylenecopolymer, ethylene-vinyl acetate copolymer (EVA), and the like, cyclicpolyolefin, modified polyolefin, poly vinyl chloride, poly vinylidenechloride, polystyrene, polyamide, polyimide, polyamide-imide,polycarbonate, poly-4-methylpentene-1, ionomer, acrylic resin,polymethyl methacrylate, acrylic-styrene copolymer (AS resin),styrene-butadiene copolymer, ethylene-vinyl alcohol copolymer (EVOH),polyester such as polyethylene terephthalate (PET), poly butyleneterephthalate(PBT), polycyclohexyl dimethylene terephthalate (PCT), andthe like, polyether, polyetherketone(PEK), polyether-ether-ketone(PEEK),polyetherimide, polyacetal(POM), polyphenylene oxide, deformedpolyphenylene oxide, polyallylate, aromatic polyester(liquid crystalpolymer), fluorinated resin such as polytetrafluoro-ethylene,poly(vinylidene fluoride), and the like, various kinds of thermalplastic elastmer such as the styrene group, polyolefin group, polyvinylchloride group, polyurethane group, fluororubber group, chlorinatedpolyethylene group, and the like, epoxy resin, phenolic resin, urearesin, melamine resin, unsaturated polyester, silicone resin,polyurethane, copolymers having the above mentioned in the main, blendshaving the above mentioned in the main, and polymer alloy having theabove mentioned in the main, may be used. As a result of this, a stuckbody wherein one kind or two more kinds of the above mentioned arestuck, may be used.

In a case where the plastic substrate is used for the surface substrate170, there are advantages as follows. For example, a big size of thesurface substrate 170 can be manufactured in a body. Furthermore, evenif the surface substrate 170 has a complex configuration such as acurved surface or concave and convex configurations, the surfacesubstrate 170 can be manufactured easily. In addition, material cost andmanufacturing cost are low. Hence, in a case where the plastic substrateis used for the surface substrate 170, there is an advantageparticularly for manufacturing a large and cheap device such as a liquidcrystal display apparatus or an organic EL display device.

In this embodiment, the surface substrate 170 may form a independentbasic body of a device such that the active matrix substrate of anactive matrix type liquid crystal display apparatus or a displayapparatus using a change of a reflection ratio based on an applicationof an electric field, for example an electrophoresis display panel usingan electrophoresis effect of a particle, is used as a thin filmapparatus. For example, the surface substrate 170 may form a part of thedevice such as a color filter, an electrode layer, a dielectric layer,an insulating layer, and a semiconductor element.

Second Embodiment

As shown in FIG. 4-(b), in the second embodiment, a surface layer 180functioning as a protection layer is formed at a side opposite to theheat resistant substrate 100 of the thin film device layer 140. Sincethere is a case where the organic TFT does not have good resistance toweather, a material providing high barrier to water, oxygen, and thelike, is selected as the surface layer 180.

<Fourth Step>

FIG. 5-(a) is a view for explaining the first embodiment of the presentinvention and shows a step following to the step shown in FIG. 4-(a)

FIG. 5-(b) is a view for explaining the second embodiment of the presentinvention and shows a step following to the step shown in FIG. 4-(b)

First Embodiment

As shown in FIG. 5-(a), a peeling process at the interface of the heatresistant substrate 100 and the separation layer 120 is implemented. Inthis step, an end part of the stuck body shown in FIG. 4-(a) is cut andthe adhering force of the separation layer can be reduced by entering aliquid phase from an end part of a cut surface. Water, alcohol, or ageneral organic solvent can be used as the liquid phase. The liquid maybe vapor.

Accordingly, as shown in FIG. 5-(a), when a force is applied so as topeel the heat resistant substrate 100, the heat resistant substrate 100can be peeled easily from the separation layer 120. As a result of this,the thin film device layer 140 can be transferred to the surfacesubstrate 170.

Furthermore, it is possible to reduce manufacturing cost by reusing(recycling) the heat resistant substrate 100.

Taking the above mentioned respective steps, transferring the thin filmdevice layer 140 to the surface substrate 170 is completed, so that thethin film apparatus wherein the thin film device layer 140 istransferred onto the surface substrate 170 can be manufactured.Alternatively, the surface substrate 170, wherein the thin film devicelayer 140 is formed, may be provided of a desirable material, so thatthe thin film apparatus can be manufactured.

Second Embodiment

As shown in FIG. 5-(b), a peeling process at the interface of the heatresistant substrate 100 and the separation layer 120 is implemented. Inthis step, an end part of the stuck body shown in FIG. 4-(b) is cut andthe adhering force of the separation layer 120 can be reduced byentering a liquid phase from an end part of a cut surface. Water,alcohol, or a general organic solvent can be used as the liquid phase.The liquid may be vapor.

Accordingly, as shown in FIG. 5-(b), when a force is applied so as topeel the heat resistant substrate 100, the heat resistant substrate 100can be peeled easily from the separation layer 120. As a result of this,an independent film element having the thin film device layer 140,wherein the surface layer 180 functions as a protection layer, can beobtained.

Furthermore, it is possible to reduce manufacturing cost by reusing(recycling) the heat resistant substrate 100.

The same material and same type of manufacturing method as applied tothe separation layer 120 can be applied to the surface layer 180, so asto reduce the amount of manufacturing equipment.

Particularly, the organic film using a poly-para-xylylene material iseffective as the surface layer 180 and the separation layer 120. Inaddition, poly-para-xylylene material itself has good mechanicalstrength. Hence, when the separation layer 120 is peeled from the heatresistant substrate 100 in the fourth step, the separation layer 120 canbe handled as an independent body. In addition, in a case where theseparation layer 120 has sufficient thickness, the separation layer 120can be used as the thin film apparatus without implementing furtherprocesses. Furthermore, if necessary, the separation layer 120 isconnected to another substrate by the fifth step described below, sothat a stable thin film apparatus having high reliability can beprovided.

Thus, according to the manufacturing methods of the thin film apparatusof the first and second embodiments, the thin film device layer 140itself that is an object to be peeled off, is not peeled directly.Rather, the heat resistant substrate 100 is peeled from the thin filmdevice layer 140 by the separation layer 120. Thus, the heat resistantsubstrate 100 can be peeled from a side of the thin film device layer140 easily and surely. Therefore, the thin film apparatus having a highreliability can be manufactured without the thin film device layer 140being damaged due to a peeling operation.

Next, the third and fourth embodiments will be described with referenceto FIG. 6 and FIG. 7.

FIG. 6 is a view for explaining manufacturing methods of thin filmapparatuses of third and fourth embodiments. FIG. 7 is a view forexplaining the manufacturing method of the thin film apparatus of thethird embodiment. A step, whereby a bottom surface substrate is adheredafter the heat resistant substrate is peeled from the thin film device,is shown in FIG. 6 and FIG. 7.

<Fifth Step>

The third embodiment is shown in FIG. 6-(a) and the fourth embodiment isshown in FIG. 6-(b). As shown in FIG. 6, an adhesive layer 190 and abottom surface substrate 200 are used in the fifth step.

Third Embodiment

As shown in FIG. 6-(a), the bottom surface substrate 200 is adhered to alower surface of the thin film device layer 140, that is a surfacesituated at the side where the heat resistant substrate is peeled, bythe adhesive layer 190. Various curing type adhesive agents, for examplea reactive curing type adhesive agent, a heat curing type adhesiveagent, an optical curing type adhesive agent such as a ultraviolet rayscuring type adhesive agent, and an anaerobic curing type adhesive agentmay be used as a proper example of an adhesive agent comprising theadhesive layer 160. The adhesive agent may comprise, for example, anepoxy group, an acrylate group, a silicone group, and any other suchgroups. Such an adhesive layer 160 may be formed by, for example, anapplication method.

In a case where a curing type adhesive agent is used for the adhesivelayer 190, for example, after the adhesive agent is applied to the lowersurface of the thin film device layer 140 and the bottom surfacesubstrate 200 is connected thereto, the curing type adhesive agent iscured by a curing method corresponding to a characteristic of the curingtype adhesive agent so that the thin film device layer 140 and the thirdsubstrate 200 adhere and are fixed.

In a case where an optical curing type adhesive agent is used as theadhesive layer 190, it is preferable that light be irradiated from aside of the bottom surface substrate 200 having optical permeability. Ina case where an ultraviolet ray curing type adhesive agent, by which itis difficult to negatively influence the thin film device layer 140, isused, the light may be irradiated from a side of the surface substrate170 having optical permeability or from the both sides of the surfacesubstrate 170 and the bottom surface substrate 200. The adhesive layer190 may be formed at the bottom surface substrate 200 and the thin filmdevice layer 140 may adhere thereon. In a case where the bottom surfacesubstrate 200 itself has an adhering function, forming the adhesivelayer 190 can be omitted.

Fourth Embodiment

As shown in FIG. 6-(b), the bottom surface substrate 200 is adhered ontoa lower surface of the thin film device layer 140, that is a surfacesituated at a side where the heat resistant substrate is peeled, by theadhesive layer 190. Various curing type adhesive agents, for example areactive curing type adhesive agent, a heat curing type adhesive agent,an optical curing type adhesive agent such as an ultraviolet ray curingtype adhesive agent, and an anaerobic curing type adhesive agent may beused as a proper example of a adhesive agent comprising the adhesivelayer 160. The adhesive agent may comprise, for example, an epoxy group,an acrylate group, a silicone group, and any other groups. Such anadhesive layer 160 may be formed by, for example, an application method.

In a case where the optical curing type adhesive agent is used as theadhesive layer 190, it is preferable that light be irradiated from aside of the bottom surface substrate 200 having optical permeability. Ina case where the ultraviolet rays curing type adhesive agent, by whichit is difficult to influence the thin film device layer 140, is used,the light may be irradiated from a side of the surface substrate 170having optical permeability. In a case where the surface layer 180 hasoptical permeability, the light may be irradiated from both sides of thesurface layer 180 and the bottom surface substrate 200. The adhesivelayer 190 may be formed at the bottom surface substrate 200 and the thinfilm device layer 140 may adhere thereon. In a case where the bottomsurface substrate 200 itself has an adhering function, forming theadhesive layer 190 can be omitted.

In the third and fourth embodiments, it is acceptable for thecharacteristics such as heat resistance and the corrosion resistance ofthe bottom substrate 200 to be inferior to the same characteristics ofthe heat resistant substrate 100.

Depending on kinds of machines to be manufactured, the bottom surfacesubstrate 200 is required to have a mechanical characteristic such asrigidity (strength) to some extent, but the bottom surface substrate 200may have flexibility and elasticity.

For example, a thin plastic substrate having a sheet configuration, or athick plastic substrate may be used as the bottom surface substrate 200,depending on the kinds of machines to be manufactured. In addition, thebottom surface substrate 200 does not have to be a plane plate but mayhave a curved configuration.

In a case where a plastic substrate is used as the bottom surfacesubstrate 200, either a thermoplastic resin or a thermosetting resin maybe used as a synthetic resin comprising the plastic substrate. Forexample, polyolefins such as polyethylene, polypropylene,ethylene-propylene copolymer, ethylene-vinyl acetate copolymer (EVA),and the like, cyclic polyolefin, modified polyolefin, poly vinylchloride, poly vinylidene chloride, polystyrene, polyamide, polyimide,polyamide-imide, polycarbonate, poly-4-methylpentene-1, ionomer, acrylicresin, polymethyl methacrylate, acrylic-styrene copolymer (AS resin),styrene-butadiene copolymer, ethylene-vinyl alcohol copolymer (EVOH),polyester such as polyethylene terephthalate (PET), poly butyleneterephthalate(PBT), polycyclohexyl dimethylene terephthalate (PCT), andthe like, polyether, polyetherketone(PEK), polyether-ether-ketone(PEEK),polyetherimide, polyacetal(POM), polyphenylene oxide, deformedpolyphenylene oxide, polyallylate, aromatic polyester(liquid crystalpolymer), fluorinated resin such as polytetrafluoro-ethylene,poly(vinylidene fluoride), and the like, various kinds of thermalplastic elastmers such as the styrene group, polyolefin group, polyvinylchloride group, polyurethane group, fluororubber group, chlorinatedpolyethylene group, and the like, epoxy resin, phenolic resin, urearesin, melamine resin, unsaturated polyester, silicone resin,polyurethane, copolymers having the above mentioned in the main, blendshaving the above mentioned in the main, and polymer alloy having theabove mentioned in the main may be used. As a result of this, a stuckbody wherein one kind or two more kinds of the above mentioned arestuck, may be used.

In a case where a plastic substrate is used for the bottom surfacesubstrate 200, a big size of the bottom surface substrate 200 can bemanufactured in a body. Furthermore, in a case where the plasticsubstrate is used for the bottom surface substrate 200, even if thebottom surface substrate 200 has a complex configuration such as acurved surface or concave and convex configurations, the bottom surfacesubstrate 200 can be manufactured easily. In addition, in a case wherethe plastic substrate is used for the bottom surface substrate 200,there is an advantage of low material cost and low manufacturing cost.Hence, in a case where the plastic substrate is used for the bottomsurface substrate 200, there is an advantage for manufacturing a largeand a cheap device such as a liquid crystal display apparatus or anorganic EL display apparatus.

In both embodiments, the bottom surface substrate 200 may form anindependent body of a device such that the active matrix substrate of anactive matrix type liquid crystal display apparatus or a displayapparatus using a change of a reflection ratio based on an applicationof an electric field, for example an electrophoresis display panel usingan electrophoresis effect of a particle, is used as a thin filmapparatus. For example, the bottom surface substrate 200 may form a partof the device such as a color filter, an electrode layer, a dielectriclayer, an insulating layer, or a semiconductor element.

<Sixth Step>

The sixth step is taken for only the third embodiment of the presentinvention.

FIG. 7 is a view for explaining the manufacturing method of the thinfilm apparatus of the third embodiment and shows steps for peeling thesurface substrate.

As shown in FIG. 7, the adhesive layer 160 made by a hot melt adhesiveagent is heated so as to be hot-melted. As a result of this, since theadhesive force of the adhesive layer 160 is weakened, the surfacesubstrate 180 can be peeled from a side of the thin film device layer140. This surface substrate 180 can be used repeatedly by removing thehot melt adhesive agent that is adhered. Furthermore, in a case where awater-soluble adhesive agent is used as the adhesive layer 160, an areaincluding at least the adhesive layer 160 may be immersed in pure water.

The adhesive layer 160 remaining on the surface of the thin film devicelayer 140 is removed so that the thin film apparatus wherein the thinfilm device layer 140 is transferred to the bottom substrate 200 can bemanufactured.

In the present invention, after the thin film device is transferred tothe surface substrate or the bottom surface material that is provided tothe product finally, a wire or the like for which a process at a hightemperature is not necessary may be formed on this substrate. However,it is preferable that, in the above mentioned second step, the thin filmtransistor be formed on the heat resistant substrate as forming amatrix, a scanning line electrically connecting to a gate of the thinfilm transistor, a data line electrically connecting to a source of thethin film transistor, and a pixel electrode electrically connecting to adrain of the thin film transistor, and these wires and the electrode aretransferred to the substrate which is provided to the product finally aswell as the thin film device.

Furthermore, in the present invention, a thin film transistor for adriving circuit may be formed as the thin film transistor so as tomanufacture an active matrix substrate having a driving circuit with thethin film transistor. In addition, in the present invention, an organicTFT or an organic EL element may be formed on the heat resistantsubstrate.

It is possible to obtain an electro-optical apparatus such as a liquidcrystal display apparatus by putting an electro-optical material such asa liquid crystal between the active matrix substrate of the presentinvention and a facing substrate. In addition, an electro-opticalapparatus, such as an organic EL display apparatus or a displayapparatus wherein a reflection ratio is changed based on an input of anelectric field, can be obtained. That is, according to the presentinvention, since a large substrate, a cheap substrate, a light weightsubstrate, a deformation resistant substrate, and an unsplit substratecan be used as a substrate provided for a product finally, it ispossible to obtain an electro-optical apparatus that is cheap and lightand with good impact resistance.

EXAMPLE

Next, examples related to respective embodiments will be described.

FIG. 8 is a view for explaining an example of the second embodiment ofthe present invention FIG. 9 is a view for explaining an example of thethird embodiment of the present invention. FIG. 10 is a view forexplaining an example of the fourth embodiment of the present invention.

In FIG. 8, an individual electrode is numbered as 155, an organicemission layer is numbered as 156, electrical charge injection layer isnumbered as 157 and a common electrode is numbered as 158.

First Example

A specific example of the first embodiment of a manufacturing method ofthe thin film apparatus will be described.

According to the method, the thin film device layer 140 including theorganic TFT (thin film transistor) is formed at a side of the heatresistant substrate 100 and this thin film device layer 140 istransferred to the surface substrate 170.

<First Step>

The separation film 120 made of the poly-para-xylylene film is formed onthe heat resistant substrate 100 made of the Si substrate. In thisexample, a 4 inch Si wafer is used so as to deposit the para-xylylenefilm.

The poly-para-xylylene film is sublimated at 100 through 170 degreescentigrade in a reduced pressure situation by using diX_C made by DaisanKasei Company and is continuously introduced to a heat decompositionhearth.

After a dissociative process of dimer is implemented in a state wherethe temperature of the heat decomposition is set as 650 degreescentigrade, poly-para-xylylene is introduced to a deposition room wherethe Si wafer is provided, so that the deposition is implemented at theroom temperature. Thus, the poly-para-xylylene film having a filmthickness of 10 μm is formed.

<Second Step>

Next, the organic TFT is formed on the separation layer 120. Cr metalfilm is deposited on the gate electrode by a sputtering method, untilthe film thickness of the Cr metal film becomes 50 nm. After that, adesirable pattern 150 is formed by photolithography etching.

Next, a gate insulating film 148 is formed. For this film, the organicinsulating film is formed by a spin coating method. Polyvinyl butyral isused as the organic insulating film so as to form the film thickness of100 nm of the gate insulating film 148.

Next, an organic semiconductor film 144 is formed. Poly hexyle thiofuranorganic semiconductor material is formed by the spin coating method soas to form the film thickness of 80 nm. Making a pattern of the elementand a gate electrode contact is achieved by photolithography andetching.

<Third Step>

Next, after the adhesive layer 160 made of epoxy resin as the adhesiveagent is formed on the thin film device layer 140 having an organic TFT,a surface substrate 170 made of a soda glass and having a verticallength of 150 mm, a horizontal length of 150 mm, and a thickness of 0.7mm, adheres to the thin film device layer 140 by this adhesive layer160. Next, heat is applied to the adhesive layer 160 so as to cure theepoxy resin, and the surface substrate 170 and a side of the thin filmdevice layer 140 adhere. The adhesive layer 160 may be an ultravioletray curing type adhesive agent. In this case, polymer is cured byirradiating ultraviolet rays from a side of the surface substrate 170.

(Fourth Step)

Next, one end part of the heat resistant substrate 100 is cut so as tosecure a liquid phase entry path, and thereby a peeling step isimplemented.

Thus, after the peering phenomenon is generated by the separation layer120, the heat resistant substrate 100 is peeled from a side of the thinfilm device layer 140. As a result of this, the thin film device layer140 is transferred to the surface substrate 170.

Thus, the thin film apparatus is manufactured. In the third step, in acase where a flexible substrate made of plastics or the like is used asthe surface substrate, the organic thin film apparatus having anadvantage in that the surface substrate is strong at bending and beingdropped because of light weight, can be formed. CPU, RAM, an inputcircuit and a photovoltaic power generation cell are provided ascomposition elements of the organic thin film device so as tomanufacture an independent type micro computer. In addition, a displayelement including an organic EL element can be formed.

Second Example

A specific example of the second embodiment of a manufacturing method ofthe thin film apparatus will be described.

According to the method, the thin film device layer 140 including theorganic TFT (thin film transistor) and the organic EL element is formedat a side of the heat resistant substrate 100 and this thin film devicelayer 140 is transferred to the surface substrate 170.

(First Step)

The separation film 120 made of the poly-para-xylylene film is formed onthe heat resistant substrate 100 made of the Si substrate. In thisexample, a 4 inch Si wafer is used so as to deposit the para-xylylenefilm.

The poly-para-xylylene film is sublimated at 100 through 170 degreescentigrade in a reduced pressure situation by using diX_C made by DaisanKasei Company and is continuously introduced to a heat decompositionhearth.

After a dissociative process of dimer is implemented in a state where atemperature of the heat decomposition is set as 650 degrees centigrade,poly-para-xylylene is introduced to a deposition room where the Si waferis provided, so that the deposition is implemented at the roomtemperature. Thus, the poly-para-xylylene film having a film thicknessof 10 μm is formed.

(Second Step)

Next, the organic TFT is formed on the poly-para-xylylene film. Cr metalfilm is deposited on the gate electrode by a sputtering method until thefilm thickness of the Cr metal film becomes 50 nm After that, adesirable pattern 150 is formed by photolithography etching.

Next, a gate insulating film 148 is formed. For this film, the organicinsulating film is formed by a spin coating method. Polyvinyl butyral isused as the organic insulating film so as to form the film thickness of100 nm of the gate insulating film 148.

Next, an organic semiconductor film 144 is formed. Poly hexyle thiofuranorganic semiconductor material is formed by the spin coating method soas to form the film thickness of 80 nm. Making a pattern of the elementand a gate electrode contact is achieved by photolithography andetching. An individual electrode 155 in the organic EL elementelectrically connected to the source and drain electrodes 152 at the endpart of the organic TFT is formed by a transparent conductive film.

Next, the organic emission layer 156 is deposited. A conductivepolymeric film as an electrical charge injection layer 157 contributingto obtain high efficiency of an electrical charge injection may beprovided between the transparent conductive film 155 and the organicemission layer 156.

More specifically, an ITO(Indium Tin Oxide) film having the filmthickness of 100 nm, as the transparent conductive film 155, isselectively formed by sputtering. And then, a polyethylene dihydroxythiophene film having the film thickness of 50 nm, as the electricalcharge injection layer 157, is deposited by spin coating. Polyphenylenevinylene material having the film thickness of 80 nm, as the organicemission layer 156, is formed by spin coating.

Next, as the common electrode 158, barium and silver are deposited by avacuum evaporation method. Thus, the thin film device layer 140 isformed.

(Third Step)

Next, the poly-para-xylylene film having the film thickness of 50 μm isdeposited on the thin film device layer 140 having an organic TFT and anorganic EL element.

(Fourth Step)

Next, one end part of the heat resistant substrate 100 is cut so as tosecure a liquid phase entry path, and thereby a peeling step isimplemented.

Thus, after the peeling phenomenon is generated at the interface surfaceof the poly-para-xylylene film and the heat resistant substrate 100, theheat resistant substrate 100 is peeled from a side of the thin filmdevice layer 140. As a result of this, the poly-para-xylyleneindependent body thin film device is formed as shown in FIG. 8.

The organic thin film apparatus manufactured by the above mentionedsteps is strong at bending and being dropped because of a light weight.

(Third Example)

As a specific example of the third embodiment, a manufacturing method ofthe active matrix substrate (thin film device) of the liquid crystaldisplay apparatus and the electrophoresis display apparatus(electro-optical apparatus) will be described. According to the method,the organic TFT is formed at the heat resistant substrate 100 as thethin film device layer 140. This thin film device layer 140 istransferred to the surface substrate 170 and then further transferred tothe bottom surface substrate 200.

(First Step)

The separation layer 120 made of the poly-para-xylylene film is formedon the heat resistant substrate 100 made of the glass substrate. In thisexample, the poly-para-xylylene film is formed on the glass substratehaving a vertical length of 100 mm, a horizontal length of 100 mm, and athickness of 1.1 mm.

(Second Step)

Next, the organic TFT is formed on the separation layer 120. Cr metalfilm is deposited on the gate electrode by a sputtering method, untilthe film thickness of the Cr metal film becomes 50 nm. After that, adesirable pattern 150 is formed by photolithography etching.

Next, a gate insulating film 148 is formed. For this film, the organicinsulating film is formed by a spin coating method. Polyvinyl butyral isused as the organic insulating film so as to form the film thickness of100 nm of the gate insulating film 148.

Next, an organic semiconductor film 144 is formed. Poly hexyle thiofuranorganic semiconductor material is formed by the spin coating method soas to form the film thickness of 80 nm. Making a pattern of the elementand a gate electrode contact is achieved by photolithography andetching.

Next, the source and drain electrodes 152 are formed. Furthermore, theindividual electrodes 155 electrically connected to the source and drainelectrodes 152 situated at the end part of the organic TFT are formedthereon.

(Third Step)

A cheap surface substrate 170, such as a soda glass substrate, adheresto the adhesive layer 160. This adhesive layer functions as a separationlayer shown in the sixth step, too.

(Fourth Step)

Next, one end part of the heat resistant substrate 100 is cut so as tosecure a liquid phase entry path, and thereby a peeling step isimplemented.

Thus, after the peeling phenomenon is generated by the separation layer120, the heat resistant substrate 100 is peeled from a side of the thinfilm device layer 140. As a result of this, the thin film device layer140 is transferred to the surface substrate 170.

(Fifth Step)

A flexible sheet as the bottom surface substrate 200 is connected to asurface where the heat resistant substrate 100 is peeled.

(Sixth Step)

The surface substrate 170 is separated by using the adhesive layer 160as a separation layer. As a result of this, the thin film device layer140 is transferred to the bottom surface substrate 200. Thus, the activematrix substrate used for the electro-optical display apparatus of thisexample is manufactured by forming the thin film device layer 140 at theheat resistant substrate 100 under proper conditions, transferring thethin film device layer 140 from the heat resistant substrate 100 to thesurface substrate 170, and connecting to a side of a flexible bottomsurface substrate 200 made by a plastic sheet substrate.

Furthermore, since the thin film device layer 140 is transferred twice,the thin film device layer 140 maintains a stuck structure wherein theTFT is formed on the heat resistant substrate 100 in a state wheretransferring the thin film device layer 140 to the bottom surfacesubstrate 200 is completed.

Because of this, the active matrix substrate is obtained as shown inFIG. 9. A pixel electrode is exposed at a back side of the thin filmdevice layer of this active matrix substrate. Hence, it is possible toform an electro-optical display cell at the back side of the thin filmdevice layer of this active matrix substrate.

The above mentioned electoroptical display apparatus includes the activematrix substrate, a facing substrate stuck to the active matrixsubstrate with a designated space, and liquid crystal or electrophoresisfluid that is injected between the active matrix substrate and thefacing substrate. The facing substrate and the active matrix substrateare stuck with a designated space by a sealing material including a gapmaterial that is formed along an outer periphery edge of the facingsubstrate. An inside area of this sealing material is an injection areaof the liquid crystal and electrophoresis fluid. Epoxy resin and variouskinds of ultraviolet curing type resins can be used for the sealingmaterial. Since the sealing material is partially separated, if thepressure of the inside area of the sealing material is reduced after thefacing substrate and the active matrix substrate are stuck, a displayliquid can be injected from the separated portion of the sealingmaterial, and the separated portion can be sealed by a sealing agentafter the injection.

The facing substrate is smaller than the active matrix substrate. Adriving part, such as a scanning line driving circuit or a data linedriving circuit, is formed at an outer area of the active matrixsubstrate from the outer periphery edge of the facing substrate.

The active matrix substrate for the above mentioned electro-opticaldisplay apparatus has a center area where a pixel part implements actualdisplay. A peripheral part of the center area functions as a drivingcircuit. In the pixel part where respective pixels are provided asforming a matrix shape, the organic TFT of pixel switching connected tothe scanning line and the data line formed by the conductivesemiconductor film is formed for respective pixels. A data side drivingcircuit having a shift resistor, level resistor, video line, analogswitch and the like, is provided for the data line. A scanning sidedriving circuit having the shift resistor, the level shifter, and thelike, is provided for the scanning line.

Fourth Example

A specific example of the fourth embodiment of a manufacturing method ofthe thin film apparatus will be described.

According to the method, the thin film device layer 140 including theorganic TFT (thin film transistor) is formed at a side of the heatresistant substrate 100 and this device layer 140 is peeled from theheat resistant substrate 100. The thin film apparatus formed on theseparation layer 120 further adheres to another substrate.

FIG. 10 shows a main part of the active matrix substrate of thisexample. Although this example includes first through fifth steps, abasic structure of the active matrix substrate is equivalent to theabove mentioned second example, except that the active matrix substrateof this example does not have the organic emission layer 156, theelectrical charge injection layer 157, the common electrode 158, and thebottom surface substrate 200.

Second Example

(First Step)

The separation film 120 made of poly-para-xylylene film is formed on theheat resistant substrate 100 made of the Si substrate. In this example,a 4 inch Si wafer is used so as to deposit the para-xylylene film.

The poly-para-xylylene film is sublimated at 100 through 170 degreescentigrade in a reduced pressure situation by using diX_C made by DaisanKasei Company and is continuously introduced to a heat decompositionhearth.

After a dissociative process of dimer is implemented in a state where atemperature of the heat decomposition is set as 650 degrees centigrade,poly-para-xylylene is introduced to a deposition room where the Si waferis provided, so that the deposition is implemented at the roomtemperature. Thus, the poly-para-xylylene film having a film thicknessof 10 μm is formed.

(Second Step)

Next, the organic TFT is formed on the poly-para-xylylene film. Cr metalfilm is deposited on the gate electrode by a sputtering method until thefilm thickness of the Cr metal film becomes 50 nm. After that, adesirable pattern 150 is formed by photolithography etching.

Next, a gate insulating film 148 is formed. For this film, the organicinsulating film is formed by a spin coating method. Polyvinyl butyral isused as the organic insulating film so as to form the film thickness of100 nm of the gate insulating film 148.

Next, an organic semiconductor film 144 is formed. Poly hexyle thiofuranorganic semiconductor material is formed by the spin coating method soas to form the film thickness of 80 nm. Making a pattern of the elementand a gate electrode contact is achieved by photolithography andetching. Individual electrodes 155 in the organic EL elementelectrically connected to the source and drain electrodes 152 at the endpart of the organic TFT are formed by a transparent conductive film.

(Third Step)

Next, the poly-para-xylylene film having the film thickness of 50 μm isdeposited on the thin film device layer 140 having an organic TFT and anorganic EL element.

(Fourth Step)

Next, one end part of the heat resistant substrate 100 is cut so as tosecure a liquid phase entry path, and thereby a peeling step isimplemented.

Thus, after the peeling phenomenon is generated at the interface surfaceof the poly-para-xylylene film and the heat resistant substrate 100, theheat resistant substrate 100 is peeled from a side of the thin filmdevice layer 140.

(Fifth Element)

Next, a flexible sheet is connected to a surface where the heatresistant substrate 100 is peeled as the bottom surface substrate.

The active matrix substrate manufactured by the above mentioned stepscan be used for the organic thin film apparatus that is strong atbending and being dropped because of light weight. A CPU, RAM, an inputcircuit, and a photovoltaic power generation cell are provided ascomposition elements of the organic thin film device so as tomanufacture an independent type micro computer. In addition, a displayelement including an organic EL element can be formed.

The present invention is not limited to these embodiments, butvariations and modifications may be made without departing from thescope of the present invention.

This patent application is based on a Japanese priority patentapplication No. 2002-122329 filed on Apr. 24, 2002, the entire contentsof which are hereby incorporated by reference.

1-15. (canceled)
 16. An electro-optical apparatus, comprising: an activematrix substrate, the active matrix substrate comprising a thin filmtransistor as forming a matrix manufactured by a method comprising:forming a separation layer on a heat resistant substrate; forming thethin film transistor for pixel switching on the separation layer asforming the matrix; providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from the other side of the thin film transistor,wherein an organic layer is formed as the separation layer, the organiclayer having a characteristic that generates a peeling phenomenonbecause of a reduction of an adhering force to the heat resistantsubstrate of the separation layer based on a liquid phase existing atthe interface of the separation layer and the heat resistant substrate,and the peeling phenomenon is generated by generating the liquid phaseat the interface of the separation layer and the heat resistantsubstrate.
 17. An electro-optical apparatus, comprising: an activematrix substrate, the active matrix substrate comprising a drivingcircuit comprising a thin film transistor, manufactured by a methodcomprising: forming a separation layer on a heat resistant substrate;forming the thin film transistor for the driving circuit on theseparation layer; providing a surface layer at a side of the thin filmtransistor opposite to another side that faces the heat resistantsubstrate; and generating a peeling phenomenon at an interface of theseparation layer and the heat resistant substrate so as to peel the heatresistant substrate from a side of the thin film transistor, wherein anorganic layer is formed as the separation layer, the organic layerhaving a characteristic that generates a peeling phenomenon because of areduction of an adhering force to the heat resistant substrate of theseparation layer based on a liquid phase existing at the interface ofthe separation layer and the heat resistant substrate, and the peelingphenomenon is generated by generating the liquid phase at the interfaceof the separation layer and the heat resistant substrate.
 18. Anelectro-optical apparatus, comprising: an active matrix substrate; and aliquid crystal element or an electrophoresis display element, the activematrix substrate comprising a thin film transistor as forming a matrixmanufactured by a method comprising: forming a separation layer on aheat resistant substrate; forming the thin film transistor for pixelswitching on the separation layer as forming the matrix; providing asurface layer at a side of the thin film transistor opposite to anotherside that faces the heat resistant substrate; and generating a peelingphenomenon at an interface of the separation layer and the heatresistant substrate so as to peel the heat resistant substrate from theother side of the thin film transistor, wherein an organic layer isformed as the separation layer, the organic layer having acharacteristic that generates a peeling phenomenon because of areduction of an adhering force to the heat resistant substrate of theseparation layer based on a liquid phase existing at the interface ofthe separation layer and the heat resistant substrate, and the peelingphenomenon is generated by generating the liquid phase at the interfaceof the separation layer and the heat resistant substrate.
 19. Anelectro-optical apparatus, comprising: an active matrix substrate; and aliquid crystal element or an electrophoresis display element, the activematrix substrate comprising a driving circuit comprising a thin filmtransistor, manufactured by a method comprising: forming a separationlayer on a heat resistant substrate; forming the thin film transistorfor the driving circuit on the separation layer; providing a surfacelayer at a side of the thin film transistor opposite to another thatfaces the heat resistant substrate; and generating a peeling phenomenonat an interface of the separation layer and the heat resistant substrateso as to peel the heat resistant substrate from the other side of thethin film transistor, wherein an organic layer is formed as theseparation layer, the organic layer having a characteristic thatgenerates a peeling phenomenon because of a reduction of an adheringforce to the heat resistant substrate of the separation layer based on aliquid phase existing at the interface of the separation layer and theheat resistant substrate, and the peeling phenomenon is generated bygenerating the liquid phase at the interface of the separation layer andthe heat resistant substrate.
 20. The electro-optical apparatus asclaimed in claim 16, wherein the separation layer comprisespoly-para-xylylene or a derivative of poly-para-xylylene.
 21. Theelectro-optical apparatus as claimed in claim 16, wherein the separationlayer has a film thickness greater than 10 μm.
 22. The electro-opticalapparatus as claimed in claim 16, wherein the organic layer is made ofthe same material as the separation layer.
 23. The electro-opticalapparatus as claimed in claim 16, wherein said peeling phenomenon isgenerated by introducing water or an organic solvent at the interface ofthe separation layer and the heat resistant substrate.
 24. Theelectro-optical apparatus as claimed in claim 16, wherein said peelingphenomenon is generated by introducing water at the interface of theseparation layer and the heat resistant substrate.
 25. Theelectro-optical apparatus as claimed in claim 16, wherein said peelingphenomenon is generated by introducing an organic solvent at theinterface of the separation layer and the heat resistant substrate. 26.The electro-optical apparatus as claimed in claim 16, wherein saidpeeling phenomenon is generated by introducing an alcohol at theinterface of the separation layer and the heat resistant substrate. 27.The electro-optical apparatus as claimed in claim 16, which is a liquidcrystal display apparatus.
 28. The electro-optical apparatus as claimedin claim 16, which is a organic EL display apparatus.
 29. Theelectro-optical apparatus as claimed in claim 16, which is a displayapparatus wherein a reflection ration is changed based on an input of anelectrical field.